0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features absolute maxim um ratings ta = 25 param eter sym bol value unit w orking inverse voltage w iv 50 v average rectified current i o 200 m a dc forward current i f 600 m a recurrent peak forward current i f 700 m a peak forward surge current pulse width = 1.0 second 1.0 a pulse width = 1.0 m icrosecond 2.0 a storage tem perature range t stg -55 to + 150 operating junction tem perature t j 150 total device dissipation 350 m w derate above 25 2.8 mw/ therm al resistance, junction to am bient r ja 357 /w i f(surge) p d sales@twtysemi.com 1 of 2 http://www.twtysemi.com MMBD1201;mmbd1203 mmbd1204;mmbd1205 product specification 4008-318-123
marking type MMBD1201 mmbd1203 mmbd1204 mmbd1205 marking24262728 electrical characteristics ta = 25 parameter symbol conditions min max unit breakdown voltage b v i r = 100 a 100 v i f = 20 v 25 na i f = 50 v 50 na i f =50v,t a = 150 5 a i f = 1.0 ma 550 600 mv i f = 10 ma 660 740 mv i f = 100 ma 820 920 mv i f = 200 ma 0.87 1.0 v i f = 300 ma 1.1 v diode capacitance c d v r = 0, f = 1.0 mhz 2.0 pf reverse recovery time t rr i f =i r =10ma,i rr =1.0ma,r l = 100 4.0 ns i r reverse current v f forward voltage MMBD1201;mmbd1203 mmbd1204;mmbd1205 sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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